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FGPF90N30 300V, 90A PDP IGBT
October 2006
FGPF90N30
300V, 90A PDP IGBT
Features
* High Current Capability * Low saturation voltage: VCE(sat) =1.5V @ IC = 60A * High Input Impedance * Fast switch * RoHS Complaint
tm
Description
Employing Unified IGBT Technology, Fairchild's PDP IGBTs provides low conduction and switching loss. FGPF90N30 offers the optimum solution for PDP applications where low-condution loss is essential.
Application
. PDP System
TO-220F
1 1.Gate
2.Collector
3.Emitter
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1) PD TJ Tstg TL Gate-Emitter Voltage Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100C
Description
Collector-Emitter Voltage
FGPF90N30
300 30 220 56.8 22.7 -55 to +150 -55 to +150 300
Units
V V A W W
o
C
oC o
C
Thermal Characteristics
Symbol
RJC(IGBT) RJA
Notes: (1)Repetitive test , pluse width = 100usec , Duty = 0.1 * Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Typ.
---
Max.
2.2 62.5
Units
o o
C/W C/W
(c)2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF90N30 Rev. A
FGPF90N30 300V, 90A PDP IGBT
Package Marking and Ordering Information
Device Marking
FGPF90N30
Device
FGFP90N30TU
Package
TO-220F
TC = 25oC unless otherwise noted
Packaging Type
Rail / Tube
Max Qty Qty per Tube
50ea
per Box
-
Electrical Characteristics
Symbol
Off Characteristics BVCES BVCES TJ ICES IGES
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current
VGE = 0V, IC = 250uA VGE = 0V, IC = 250uA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
300 ----
-0.6 ---
--100 250
V V/oC uA nA
On Characteristics VGE(th) G-E Threshold Voltage IC = 250uA, VCE = VGE IC =30A, VGE = 15V IC =60A, VGE = 15V VCE(sat) Collector to Emitter Saturation Voltage IC = 90A, VGE = 15V TC = 25C IC = 90A, VGE = 15V TC = 125C Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V f = 1MHz ---1690 240 80 ---pF pF pF 2.5 ----4.0 1.25 1.5 1.9 2.0 5.0 1.55 ---V V V V V
Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 200 V, IC = 60A VGE = 15V VCC = 200 V, IC = 60A RG = 10, VGE = 15V Resistive Load, TC = 125C VCC = 200 V, IC = 60A RG = 10, VGE = 15V Resistive Load, TC = 25oC -----------22 106 86 130 22 119 91 210 93 45 14 ---300 -------ns ns ns ns ns ns ns ns nC nC nC
2 FGPF90N30 Rev. A
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FGPF90N30 300V, 90A PDP IGBT
Typical Performance CharacteristicsTypical Saturation VoltageCharacteristics
Figure 1. Typical Output Characteristics
240
TC = 25 C
o
Figure 2. Typical Output Characteristics
240
TC = 125 C
o
Collector Current, IC [A]
Collector Current, IC [A]
20V
15V 12V
20V
15V 12V
180
180
120
10V
120
10V
60
VGE = 8V
60
VGE = 8V
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
0 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 10
Figure 3. Saturation Voltage
240
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
240
VCE = 20V Collector-Emitter Current, ICE [V]
Collector Current, IC [A]
180
TC = 25 C TC = 125 C
o
o
180
120
120
60
60
125 C
o
25 C
o
0 0 2 4 Collector-Emitter Voltage, VCE [V]
5
0 0 4 8 12 16 Gate-Emitter Voltage, [V] 20
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
2.0
Collector-Emitter Voltage, VCE [V]
Figure 6. Saturation Voltage vs.VGE
20
Collector-Emitter Voltage, VCE [V]
Common Emitter T = 25 C
C
o
90A
1.8
16
1.6
60A
12
1.4
IC = 30A Common Emitter VGE = 15V
8
90A
1.2
4
60A IC =30A
1.0 25
50 75 100 o Collector-ECase Temperature, TC [ C]
125
0
0
4 8 12 16 Gate-Emitter Voltage, V GE [V]
20
3 FGPF90N30 Rev. A
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FGPF90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
(Continued)
Figure 8. Capacitance Characteristics
4000
Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
Capacitance [pF]
3000
12
2000
Cies
8
90A 60A IC = 30A
4
1000
Cres
Coss
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0
0
5 10 15 20 25 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate Charge Characteristics
15 14
Gate-Emitter Voltage, VGE [V]
Common Emitter RL = 3.3 TC = 25oC
Figure 10. SOA Characteristics
300 100
Collector Current, Ic [A]
1ms 50us 100us
12 10
Vcc = 100V
10
DC Operation
8 6 4 2 0 0 20
200V
1
Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature
0.1
40 60 Gate Charge, Qg [nC]
80
100
0.01 0.1
1 10 100 Collector-Emitter Voltage, V CE [V]
1000
Figure 11. Turn-On Characteristics vs Gate Resistance
500
Figure 12. Turn Off Characteristics vs. Gate Resistance
1000
Switching Time [ns]
Switching Time [ns]
tr
100
tf
100
td(off) Common Emitter V CC = 200V, V GE = 15V IC = 60A T C = 25 C
o o
td(on)
Common Emitter VCC = 200V, VGE = 15V IC = 60A T C = 25 C T C = 125 C
o o
10 0 20 40 60 80 Gate Resistance, R G [] 100
10 0 20 40
T C = 125 C
60
80
100
Gate Resistance, R G [ ]
4 FGPF90N30 Rev. A
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FGPF90N30 300V, 90A PDP IGBT
Typical Performance Characteristics
Figure 13. Turn-On Characteristics vs. Collector Current
1000
(Continued)
Figure 14. Turn-Off Characteristics vs. Collector Current
500
tr
Switching Time [ns]
100
td(on)
Switching Time [ns]
td(off)
100
tf
10
Common Emitter V GE = 15V, RG = 10 T C = 25 C T C = 125 C
o o
Common Emitter V GE = 15V, R G = 10 T C = 25 C T C = 125 C
o o
1 10
20
30
40
50
60
70
80
90
10 10
20
30
40
50
60
70
80
90
Collector Current, IC [A]
Collector Current, IC [A]
Figure 15. Switching Loss vs Gate Resistance
1500
Figure 16. Switching Loss vs Collector Current
2000
1000
Switching Loss [uJ]
Switching Loss [uJ]
Eoff
1000
E off
E on
100
Common Emitter V GE = 15V, R G = 10 T C = 25 C T C = 125 C
o o
E on
Common Emitter VCC = 600V, VGE = 15V IC = 40A T C = 25 C T C = 125 C
o o
100
0
10
20
30 40 50 60 70 80 Gate Resistance, R G []
90 100
10 10
20
30
40
50
60
70
80
90
Collector Current, IC [A]
Figure 17. Transient Thermal Impedance of IGBT
10
Thermal Response [Zthjc]
1
0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
0 .1
0 .0 1
1 E -3 1 E -5
1 E -4
1 E -3
0 .0 1
0 .1
1
10
R e c t a n g u la r P u ls e D u r a t i o n [ s e c ]
5 FGPF90N30 Rev. A
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FGPF90N30 300V, 90A PDP IGBT
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 0 )
0.35 0.10 2.54TYP [2.54 0.20]
#1 2.54TYP [2.54 0.20]
4.70 0.20
0.50 -0.05
+0.10
2.76 0.20
9.40 0.20
6 FGPF90N30 Rev. A
15.87 0.20
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FGPF90N30 300V, 90A PDP IGBT
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
Datasheet Identification Advance Information
Product Status Formative or In Design First Production
Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I20
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
7 FGPF90N30 Rev. A
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